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ASI Microwave Diodes
Abrupt Tuning Varactors


ASI, AT series of Abrupt PN-Junction Tuning Varactors utilize the lowest resistance & highest Q characteristics of optimized tuning circuit performance. Applications include both narrow and wideband frequency tuning through 12GHz. These devices are designed so the capacitance-voltage relationship closely approximates Square Law (n = 0.5).
Absolute Maximum Ratings
Storage Temperature: -65C to +175C

CT = TOTAL CAPACITANCE
CP = PACKAGE CAPACITANCE
CJU = JUNCTION CAPACITANCE AT ZERO BIAS
VBIAS = APPLIED REVERSE VOLTAGE
q = CONTACT POTENTIAL OF THE DIODE (0.6 - 0.8 VOLTS)
n = SLOPE OF DIODE C-V CURVE (0.5 FOR ABRUPT JUNCTION)

These diodes are suitable for Transistor, Gunn and Impatt Voltage Controlled Oscillators; AFC Loops and Amplifiers; Tunable Filters; and Linear Frequency and Phase Modulators

All of the abrupt tuning varactors meet or exceed the environmental specifications of MIL-S-19500, MIL-STD-202 and methods from MIL-STD-750 that specify mechanical, electrical, thermal and environmental tests.


Downloads

Abrupt Tuning Varactors PDF (164 KB)
Silicon Abrupt Tuning Varactor PDF (84 KB)
Silicon Hyperabrupt Tuning Varactor PDF (88 KB)
Hyperabrupt Tuning Varactors PDF (292 KB)
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