See all VIMOS Power Transistors  
 

1214-1400MHz, Ground Based Radar Applications
(48V, 200µs Pulse, 10% Duty Cycle)

  
 

Radar pulsed RF applications have unique design, performance and reliability challenges relative to other high power RF applications. Ground based radar systems operate in the 1214-1400MHz band with the common 200μs Pulse, 10% Duty Cycle pulse conditions, although other pulse conditions and duty cycle profiles are also utilized.

ASI’s portfolio of Radar RF Transistors for ground based applications have been deigned from the ground up to address the specific needs of high power pulsed systems. RF design engineers seeking 1214MHz to 1400MHz Radar RF Transistors will find the portfolio to be ideally suited for their unique application. The products are state-of-the-art and combine, extreme ruggedness, high RF Gain and very high RF output power levels. With RF Gain up to 19dB and RF output power levels of up to 150 Watts @ 48 volts, a single VIMOS device can replace multiple competing RF Transistors, which reduces weight, size, cost and design time. The products can be operated from a supply voltage ranging from 24 volts up to 50 volts.

  
 

VIMOSTM has been specifically designed to address the common problems that have plagued competing products that were not up to the unique demands of commercial pulsed RF systems:

  
 
  • RUGGEDNESS - VIMOSTM devices are rated at VSWR of 20:1 and are tested to the industries most stringent VSWR
    conditions.
  • THERMAL – VIMOSTM ’s unique inverted design results in superior thermal performance.
  • GOLD – Unlike some competing LDMOS devices, VIMOSTM utilizes gold wire bonds, not aluminum which can be susceptible to high cycle fatigue (HCF).
  • PARASITIC BIPOLAR ELEMINATION – Unlike some LDMOS based devices, VIMOSTM eliminates the failure mechanism
    associated with the parasitic bipolar device (created internally in the LDMOS structure) which can suddenly conduct under
    pulsed conditions resulting in catastrophic device failure.
 
 

ASI Semiconductor’s portfolio of RF Power Transistors based on VIMOSTM technology is the ideal solution for Ground Based Radar systems.

  
     
 
Select Part Number Description Datasheet Gerber File Eval Kit
HVV1214-025 19dB Gain/25 Watts  PDF    
HVV1214-140 19dB Gain/150 Watts PDF ZIP PDF
 
     
  Overview of available VIMOS Downloads  
 
VIMOS Selector Guide PDF (2.04 MB)
Application Note: VIMOS Reliability Testing Results PDF (250 KB)
Application Note: VIMOS RF Power Transistor Mounting PDF (598 KB)
Application Note: VIMOS Thermal Overview PDF (348 KB)