|
Commercial pulsed RF applications have unique design, performance and reliability challenges relative to other high power RF applications. These systems, in the 960-1215MHz band, include the following common systems:
ASI’s portfolio of RF pulsed power transistors have been designed from the ground up to address the specific needs of these systems. RF design engineers seeking DME RF transistors, TCAS RF transistors, or IFF RF Transistors will find the portfolio to be ideally suited for their unique application. The products are state-of-the-art and combine very high RF output power levels, extreme ruggedness and high RF Gain. Additionally, because of the expense of replacing devices in the field, a highly reliable RF Transistor is a necessity. With RF Gain up to 20dB and RF output power levels of up to 800 Watts @ 48 volts, a single VIMOS device can replace multiple competing RF Transistors, which reduces weight, size, cost and design time. The products can be operated from a supply voltage ranging from 24 volts up to 50 volts.
In addition to the discrete RF Transistors, ASI also offers 50 ohm pallet amplifier products which were designed with a cost structure that allows OEM supplies to incorporate the pallet into their system. The P1000-1215 provides 950 watts with 15dB of gain across the band. ASI’s pallet amplifier products provide an off the shelf, fast time to market, high performance solution with the benefits of VIMOS performance & reliability and are cost competitive. |
|