See all VIMOS Power Transistors  

960-1215MHz, Ground and Air DME,TCAS and IFF Applications
(48V, 10µs Pulse, 10% Duty Cycle)


Commercial pulsed RF applications have unique design, performance and reliability challenges relative to other high power RF applications. These systems, in the 960-1215MHz band, include the following common systems:

ASI’s portfolio of RF pulsed power transistors have been designed from the ground up to address the specific needs of these systems. RF design engineers seeking DME RF transistors, TCAS RF transistors, or IFF RF Transistors will find the portfolio to be ideally suited for their unique application. The products are state-of-the-art and combine very high RF output power levels, extreme ruggedness and high RF Gain. Additionally, because of the expense of replacing devices in the field, a highly reliable RF Transistor is a necessity. With RF Gain up to 20dB and RF output power levels of up to 800 Watts @ 48 volts, a single VIMOS device can replace multiple competing RF Transistors, which reduces weight, size, cost and design time. The products can be operated from a supply voltage ranging from 24 volts up to 50 volts.

In addition to the discrete RF Transistors, ASI also offers 50 ohm pallet amplifier products which were designed with a cost structure that allows OEM supplies to incorporate the pallet into their system. The P1000-1215 provides 950 watts with 15dB of gain across the band. ASI’s pallet amplifier products provide an off the shelf, fast time to market, high performance solution with the benefits of VIMOS performance & reliability and are cost competitive.


VIMOSTM has been specifically designed to address the common problems which have plagued competing products that were not up to the unique demands of commercial pulsed RF systems, including:

  • RUGGEDNESS - VIMOSTM devices are rated at VSWR of 20:1 and are tested to the industries most stringent VSWR
  • THERMAL – VIMOS’s unique inverted design results in superior thermal performance.
  • GOLD – Unlike some competing LDMOS devices, VIMOSTM utilizes gold wire bonds, not aluminum which can be susceptible to high cycle fatigue (HCF).
  • PARASITIC BIPOLAR ELEMINATION – Unlike some LDMOS based devices, VIMOSTM eliminates the failure mechanism
    associated with the parasitic bipolar device (created internally in the LDMOS structure) which can suddenly conduct under
    pulsed conditions resulting in catastrophic device failure.

ASI Semiconductor’s portfolio of RF Power Transistors based on VIMOSTM technology is the ideal solution for 960-1215MHz, Ground and Air DME, TCAS and IFF Applications.

Select Part Number Description Datasheet Gerber File Eval Kit
HVV0912-150 20dB Gain/150 Watts PDF ZIP PDF
HVV0912-450 18dB Gain/500 Watts PDF    
HVV0912-800 16dB Gain/800 Watts PDF    
P1000-1215 (Pallet) 15dB Gain/950 Watts PDF    
  Overview of available VIMOS Downloads  
VIMOS Selector Guide PDF (2.04 MB)
Application Note: VIMOS Reliability Testing Results PDF (250 KB)
Application Note: VIMOS RF Power Transistor Mounting PDF (598 KB)
Application Note: VIMOS Thermal Overview PDF (348 KB)