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1030-1090MHz, Mode S-ELM Interrogator Applications
(48V, 32µs on/18µs offx48,repeated every 24ms)


Radar pulsed RF applications have unique design, performance and reliability challenges relative to other high power RF applications. Mode S-ELM RF Transistors (also known as Mode S-EL/M or Mode-Select ELM) systems operate in the 1030-1090MHz band with the 32μs on/18μs off x48, repeated every 24ms pulse conditions.

ASI’s portfolio of RF pulsed power transistors for radar interrogator applications have been deigned from the ground up to address the specific needs of high power pulsed systems. RF design engineers seeking Mode S-EL/M RF transistors will find the portfolio to be ideally suited for their unique application. The products are state-of-the-art and combine extreme ruggedness, high RF Gain and very high RF output power levels. With RF Gain up to 20dB and RF output power levels of up to 1000 Watts @ 48 volts, a single VIMOS device can replace multiple competing RF Transistors, which reduces weight, size, cost and design time. The products can be operated from a supply voltage ranging from 24 volts up to 50 volts.

In addition to the discrete RF Transistors, ASI also offers 50 ohm pallet amplifier products, which are designed with a cost structure that allows OEM supplies to incorporate the pallet into their system. The P1000-1215 provides 950 watts, with 15dB of gain across the band. ASI’s pallet amplifier products provide an off the shelf, fast time to market, high performance solution with the benefits of VIMOS performance & reliability, and are cost competitive.


VIMOSTM has been specifically designed to address the common problems that have plagued competing products that were not up to the unique demands of commercial pulsed RF systems:

  • RUGGEDNESS - VIMOS devices are rated at VSWR of 20:1 and are tested to the industries most stringent VSWR
  • THERMAL – VIMOS’s unique inverted design results in superior thermal performance.
  • GOLD – Unlike some competing LDMOS devices, VIMOS utilizes gold wire bonds, not aluminum which can be susceptible to high cycle fatigue (HCF).
  • PARASITIC BIPOLAR ELEMINATION – Unlike some LDMOS based devices, VIMOS eliminates the failure mechanism
    associated with the parasitic bipolar device (created internally in the LDMOS structure) which can suddenly conduct under
    pulsed conditions resulting in catastrophic device failure.

ASI Semiconductor’s portfolio of RF Power Transistors based on VIMOSTM technology is the ideal solution for 1030-1090MHz Mode-S applications.

Select Part Number Description Datasheet Gerber File Eval Kit
HVV1011-075L 20dB Gain/75 Watts PDF    
HVV1011-180L 18dB Gain/180 Watts PDF    
HVV1011-500L 17dB Gain/550 Watts PDF    
HVV1011-1000L 16dB Gain/1000 Watts PDF    
P1000-1215 (Pallet) 15dB Gain/950 Watts PDF    
  Overview of available VIMOS Downloads  
VIMOS Selector Guide PDF (2.04 MB)
Application Note: VIMOS Reliability Testing Results PDF (250 KB)
Application Note: VIMOS RF Power Transistor Mounting PDF (598 KB)
Application Note: VIMOS Thermal Overview PDF (348 KB)