Radar pulsed RF applications have unique design, performance and reliability challenges relative to other high power RF applications. Mode S-ELM RF Transistors (also known as Mode S-EL/M or Mode-Select ELM) systems operate in the 1030-1090MHz band with the 32μs on/18μs off x48, repeated every 24ms pulse conditions.

ASI’s portfolio of RF pulsed power transistors for radar interrogator applications have been deigned from the ground up to address the specific needs of high power pulsed systems. RF design engineers seeking Mode S-EL/M RF transistors will find the portfolio to be ideally suited for their unique application. The products are state-of-the-art and combine extreme ruggedness, high RF Gain and very high RF output power levels. With RF Gain up to 20dB and RF output power levels of up to 1000 Watts @ 48 volts, a single VIMOS device can replace multiple competing RF Transistors, which reduces weight, size, cost and design time. The products can be operated from a supply voltage ranging from 24 volts up to 50 volts.

In addition to the discrete RF Transistors, ASI also offers 50 ohm pallet amplifier products, which are designed with a cost structure that allows OEM supplies to incorporate the pallet into their system. The P1000-1215 provides 950 watts, with 15dB of gain across the band. ASI’s pallet amplifier products provide an off the shelf, fast time to market, high performance solution with the benefits of VIMOS performance & reliability, and are cost competitive.

VIMOS^TM has been specifically designed to address the common problems that have plagued competing products that were not up to the unique demands of commercial pulsed RF systems: